IRF3205 MOSFET

₹19.00

Features:

Gate to source voltage is ±20V
On-Resistance Rds(on) of 8mohm at Vgs of 10V
Power dissipation (Pd) of 130W at 25°C
Continuous drain current (Id) of 110A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C
Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.

Out of stock

SKU: OLEM00105 Category: MOSFETs

Description

IRF3205 MOSFET

The IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.

Additional information

Weight	8 g
Dimensions	8 × 6 × 2 cm
No. of Output	1
Output Type	Analog Voltage
Polarity	N-Channel
Drain-Source Breakdown Voltage (Vds) (V)	55
Continuous Drain Current (Id) (A)	110
On - Drain-Source Resistance (Rds) (mΩ)	8
Gate-Source Voltage (Vgs) (V)	20
Gate Charge (Qg) (nC)	200
Power Dissipation(Pd) (W)	200