- Gate to source voltage is ±20V
- On-Resistance Rds(on) of 8mohm at Vgs of 10V
- Power dissipation (Pd) of 130W at 25°C
- Continuous drain current (Id) of 110A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
- Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.
The IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.